TEMPERATURE-DEPENDENCE OF COMMON-EMITTER-I-V AND COLLECTOR BREAKDOWN VOLTAGE CHARACTERISTICS IN ALGAAS/GAAS AND ALINAS/GAINAS HBTS GROWN BY MBE

被引：22
作者：
MALIK, RJ
CHAND, N
NAGLE, J
RYAN, RW
ALAVI, K
CHO, AY
机构：
[1] AT&T Bell Laboratories, Murray Hill, NJ
[2] Central Research Laboratory, Thomson-CSF, Orsay
[3] Department of Electrical Engineering, University of Texas, Arlington, TX
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 11期
关键词：
D O I：
10.1109/55.192838
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature-dependent measurements from 25 to 125-degrees-C have been made of the dc I-V characteristics of HBT's with GaAs and In0.53Ga0.47As collector regions. It was found that the GaAs HBT's have very low output conductance and high collector breakdown voltage, BV(CEO) > 10 V at 25-degrees-C, which increases with temperature. In striking contrast, the In0.53Ga0.47As HBT's have very high output conductance and low BV(CEO) is similar to 2.5 V at 25-degrees-C, which actually decreases with temperature. This different behavior is explained by the > 10(4) higher collector leakage current, I(CO), in In0.53Ga0.47As compared to GaAs due to bandgap differences. It is also shown that device self-heating plays a role in the I-V characteristics.
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页码：557 / 559
页数：3
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