SURFACE PHOTO-VOLTAGE IN GE-DOPED P-TYPE ALXGA1-XAS

被引：5

作者：

KALNITSKY, A

ZUKOTYNSKI, S

SUMSKI, S

机构：

[1] UNIV TORONTO,CTR STUDY MAT,TORONTO M5S 1A4,ONTARIO,CANADA

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4744 / 4747

页数：4

共 21 条

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