VARIABLE RANGE HOPPING IN DOPED CRYSTALLINE SEMICONDUCTORS

被引：59
作者：
EFROS, AL
VANLIEN, N
SHKLOVSKII, BI
机构：
[1] A.F. Ioffe Physico-Technical Institute, the USSR Academy of Sciences, Leningrad
来源：
SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 10期
关键词：
D O I：
10.1016/0038-1098(79)90484-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The computer simulation is made to determine the temperature dependence of the hopping conductivity in the variable range hopping regime. It is found to obey the equation (1) rather than the Mott law. A simple analytical procedure is proposed which fits well the results of simulation. © 1979.
引用
收藏
页码：851 / 854
页数：4
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