TRANSMISSION ELECTRON-MICROSCOPE STUDY OF QUARTZ CRUCIBLES USED IN GROWTH OF CZOCHRALSKI SILICON

In this study, a combination of conventional TEM imaging, high resolution TEM imaging, energy dispersive X-ray analysis electron energy loss spectroscopy, and electron diffraction have been applied to the characterization of quartz crucibles used in the manufacture of Czochralski silicon. The walls of several quartz crucibles, obtained before or after use in a crystal puller, were examined in cross-section so that detailed observations could be made as a function of depth. Submicron sized crystalline silicon oxide inclusions were observed in the outer 20 μm of the crucible wall after the Si crystal growth process with number densities ranging from 1010 to 1012 cm-3. Analysis of the crystal structure of these inclusions as well as other observations will be discussed. © 1990.