A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE

被引：26
作者：
CHOU, S
DAVIDSON, LA
GIBBONS, JF
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 01期
关键词：
D O I：
10.1063/1.1653237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：23 / &
相关论文
共 11 条
[1]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[2]   ANISOTROPIC ENERGY LOSS OF LIGHT PARTICLES OF MEV ENERGIES IN THIN SILICON SINGLE CRYSTALS [J].
ERGINSOY, C ;
GIBSON, WM ;
WEGNER, HE .
PHYSICAL REVIEW LETTERS, 1964, 13 (17) :530-&
[3]   IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].
ERIKSSON, L ;
DAVIES, JA ;
JOHANSSON, NG ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+
[4]   ANALYSIS OF SB-IMPLANTED SILICON BY (P P) SCATTERING AND HALL MEASUREMENTS [J].
ERIKSSON, L ;
DAVIES, JA ;
DENHARTOG, J ;
MAYER, JW ;
MARSH, OJ ;
MARKARIOUS, R .
APPLIED PHYSICS LETTERS, 1967, 10 (11) :323-+
[5]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[6]  
LINHARD J, 1965, KGL DANSKE VIDENSKAB, V34
[7]   ARSENIC ISOCONCENTRATION DIFFUSION STUDIES IN SILICON [J].
MASTERS, BJ ;
FAIRFIEL.JM .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2390-&
[8]   ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
MAYER, JW ;
ERIKSSON, L ;
PICRAUX, ST ;
DAVIES, JA .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&
[9]   A COMPARISON OF HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-3 AND -V ELEMENTS IN SI AND GE [J].
MAYER, JW ;
DAVIES, JA ;
ERIKSSON, L .
APPLIED PHYSICS LETTERS, 1967, 11 (12) :365-&
[10]   SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].
TRUMBORE, FA .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233
12