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ELECTROCHEMICAL BEHAVIOR OF AN AQUEOUS ELECTROLYTE-I-DOPED ZNSE JUNCTION IN THE DARK AND UNDER ILLUMINATION
被引:46
作者
:
GAUTRON, J
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
GAUTRON, J
LEMASSON, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
LEMASSON, P
RABAGO, F
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
RABAGO, F
TRIBOULET, R
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
TRIBOULET, R
机构
:
[1]
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
[2]
CNRS,PHYS SOLIDES LAB,F-92190 MEUDON,FRANCE
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1979年
/ 126卷
/ 11期
关键词
:
flatband potential;
II-VI compounds;
optical absorption;
semiconductor electrode;
D O I
:
10.1149/1.2128817
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
Aqueous electrolyte/I-doped ZnSe junctions have been electrochemically investigated either in the dark or under monochromatic illumination. Large dark potential ranges of stability (at least 3V) have been found in electrolytic media of pH 0, 6.3, and 14. It has been possible to determine the flatband potential values Vfb by electrical and optical measurements in the media studied. A Nernstian flatbana-pH dependence has been observed by the two methods for (111) oriented electrode surfaces. For (110) surface orientation, electrical measurements in media of pH > 6 give a different variation of Vfb. These potentials are more negative than for other II-VI compounds previously studied (-1.65 to -2.45 V/NHE). Determination of a deep acceptor level has been possible: It is located at 0.68 eV below the conduction band. © 1979, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:1868 / 1875
页数:8
相关论文
共 38 条
[1]
BORON-ION-IMPLANTATION AND FLUORINE-ION-IMPLANTATION INTO ZNSE SINGLE-CRYSTALS
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
ADACHI, S
MACHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
MACHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(01)
: 135
-
139
[2]
BODDY PJ, 1963, ANN NY ACAD SCI, V101, P683
[3]
Butler M, COMMUNICATION
[4]
PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
BUTLER, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(05)
: 1914
-
1920
[5]
PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 228
-
232
[6]
DAUNAY J, COMMUNICATION
[7]
THE CHARGE DISTRIBUTION AT THE ZINC OXIDE-ELECTROLYTE INTERFACE
DEWALD, JF
论文数:
0
引用数:
0
h-index:
0
DEWALD, JF
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1960,
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161
[8]
STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES
ELLIS, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
ELLIS, AB
KAISER, SW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
KAISER, SW
BOLTS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BOLTS, JM
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1977,
99
(09)
: 2839
-
2848
[9]
FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[10]
FRENKEL J, 1938, PHYS REV, V54, P657
←
1
2
3
4
→
共 38 条
[1]
BORON-ION-IMPLANTATION AND FLUORINE-ION-IMPLANTATION INTO ZNSE SINGLE-CRYSTALS
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
ADACHI, S
MACHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
MACHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(01)
: 135
-
139
[2]
BODDY PJ, 1963, ANN NY ACAD SCI, V101, P683
[3]
Butler M, COMMUNICATION
[4]
PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
BUTLER, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(05)
: 1914
-
1920
[5]
PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 228
-
232
[6]
DAUNAY J, COMMUNICATION
[7]
THE CHARGE DISTRIBUTION AT THE ZINC OXIDE-ELECTROLYTE INTERFACE
DEWALD, JF
论文数:
0
引用数:
0
h-index:
0
DEWALD, JF
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1960,
14
: 155
-
161
[8]
STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES
ELLIS, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
ELLIS, AB
KAISER, SW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
KAISER, SW
BOLTS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BOLTS, JM
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1977,
99
(09)
: 2839
-
2848
[9]
FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[10]
FRENKEL J, 1938, PHYS REV, V54, P657
←
1
2
3
4
→