COMPUTATION OF MAGNETIC DEFLECTORS FOR ELECTRON-BEAM LITHOGRAPHY

被引:10
|
作者
LENCOVA, B [1 ]
LENC, M [1 ]
VANDERMAST, KD [1 ]
机构
[1] DELFT UNIV TECHNOL,DEPT APPL PHYS,2628 CJ DELFT,NETHERLANDS
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1846 / 1850
页数:5
相关论文
共 50 条
  • [41] WORKPIECE CHARGING IN ELECTRON-BEAM LITHOGRAPHY
    INGINO, J
    OWEN, G
    BERGLUND, CN
    BROWNING, R
    PEASE, RFW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 1367 - 1371
  • [42] ELECTRON-BEAM LITHOGRAPHY - ITS APPLICATIONS
    HOHN, FJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1405 - 1411
  • [43] THERMAL EFFECTS IN ELECTRON-BEAM LITHOGRAPHY
    MULDER, EH
    VANDERMAST, KD
    ENTERS, AC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1552 - 1555
  • [44] RESOLUTION LIMITS FOR ELECTRON-BEAM LITHOGRAPHY
    BROERS, AN
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (04) : 502 - 513
  • [45] ELECTRON-BEAM LITHOGRAPHY: AN OVERVIEW.
    Iida, Yasuo
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1984, 13 : 287 - 302
  • [46] Contrast limitations in electron-beam lithography
    Crandall, R
    Hofmann, U
    Lozes, RL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2945 - 2947
  • [47] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [48] DOT MATRIX ELECTRON-BEAM LITHOGRAPHY
    NEWMAN, TH
    PEASE, RFW
    DEVORE, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 999 - 1002
  • [49] ELECTRON-BEAM LITHOGRAPHY FOR SMALL MOSFETS
    WATTS, RK
    FICHTNER, W
    FULS, EN
    THIBAULT, LR
    JOHNSTON, RL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1338 - 1345
  • [50] ON DOSE CORRECTION IN ELECTRON-BEAM LITHOGRAPHY
    DESHMUKH, PR
    KHOKLE, WS
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 421 - 423