10 GHZ GAAS JFET DUAL-MODULUS PRESCALER-IC

被引:1
作者
KASAHARA, J
WADA, M
KAWASAKI, H
HIDA, Y
OKUBORA, A
机构
关键词
D O I
10.1049/el:19890596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:889 / 890
页数:2
相关论文
共 5 条
[1]   GAAS J-FET FORMED BY LOCALIZED ZN DIFFUSION [J].
DOHSEN, M ;
KASAHARA, J ;
KATO, Y ;
WATANABE, N .
ELECTRON DEVICE LETTERS, 1981, 2 (07) :157-158
[2]   LOW DISSIPATION CURRENT GAAS PRESCALER IC [J].
HASEGAWA, K ;
UENOYAMA, T ;
NISHII, K ;
ONUMA, T .
ELECTRONICS LETTERS, 1986, 22 (05) :251-252
[3]  
MAEMURA K, 1987, P GAAS IC S, P273
[4]   A 4.5-GHZ GAAS DUAL-MODULUS PRESCALER IC [J].
OHHATA, M ;
TAKADA, T ;
INO, M ;
KATO, N ;
IDA, M .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (01) :158-160
[5]   A 5-MA 1-GHZ GAAS DUAL-MODULUS PRESCALAR IC [J].
SAITO, S ;
TAKADA, T ;
KATO, N .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (04) :538-543