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10 GHZ GAAS JFET DUAL-MODULUS PRESCALER-IC
被引:1
作者
:
KASAHARA, J
论文数:
0
引用数:
0
h-index:
0
KASAHARA, J
WADA, M
论文数:
0
引用数:
0
h-index:
0
WADA, M
KAWASAKI, H
论文数:
0
引用数:
0
h-index:
0
KAWASAKI, H
HIDA, Y
论文数:
0
引用数:
0
h-index:
0
HIDA, Y
OKUBORA, A
论文数:
0
引用数:
0
h-index:
0
OKUBORA, A
机构
:
来源
:
ELECTRONICS LETTERS
|
1989年
/ 25卷
/ 14期
关键词
:
D O I
:
10.1049/el:19890596
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:889 / 890
页数:2
相关论文
共 5 条
[1]
GAAS J-FET FORMED BY LOCALIZED ZN DIFFUSION
[J].
DOHSEN, M
论文数:
0
引用数:
0
h-index:
0
DOHSEN, M
;
KASAHARA, J
论文数:
0
引用数:
0
h-index:
0
KASAHARA, J
;
KATO, Y
论文数:
0
引用数:
0
h-index:
0
KATO, Y
;
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
.
ELECTRON DEVICE LETTERS,
1981,
2
(07)
:157
-158
[2]
LOW DISSIPATION CURRENT GAAS PRESCALER IC
[J].
HASEGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
HASEGAWA, K
;
UENOYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
UENOYAMA, T
;
NISHII, K
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
NISHII, K
;
ONUMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
ONUMA, T
.
ELECTRONICS LETTERS,
1986,
22
(05)
:251
-252
[3]
MAEMURA K, 1987, P GAAS IC S, P273
[4]
A 4.5-GHZ GAAS DUAL-MODULUS PRESCALER IC
[J].
OHHATA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
OHHATA, M
;
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
TAKADA, T
;
INO, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
INO, M
;
KATO, N
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
KATO, N
;
IDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
IDA, M
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1988,
36
(01)
:158
-160
[5]
A 5-MA 1-GHZ GAAS DUAL-MODULUS PRESCALAR IC
[J].
SAITO, S
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
SAITO, S
;
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
TAKADA, T
;
KATO, N
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
KATO, N
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1986,
21
(04)
:538
-543
←
1
→
共 5 条
[1]
GAAS J-FET FORMED BY LOCALIZED ZN DIFFUSION
[J].
DOHSEN, M
论文数:
0
引用数:
0
h-index:
0
DOHSEN, M
;
KASAHARA, J
论文数:
0
引用数:
0
h-index:
0
KASAHARA, J
;
KATO, Y
论文数:
0
引用数:
0
h-index:
0
KATO, Y
;
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
.
ELECTRON DEVICE LETTERS,
1981,
2
(07)
:157
-158
[2]
LOW DISSIPATION CURRENT GAAS PRESCALER IC
[J].
HASEGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
HASEGAWA, K
;
UENOYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
UENOYAMA, T
;
NISHII, K
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
NISHII, K
;
ONUMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
ONUMA, T
.
ELECTRONICS LETTERS,
1986,
22
(05)
:251
-252
[3]
MAEMURA K, 1987, P GAAS IC S, P273
[4]
A 4.5-GHZ GAAS DUAL-MODULUS PRESCALER IC
[J].
OHHATA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
OHHATA, M
;
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
TAKADA, T
;
INO, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
INO, M
;
KATO, N
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
KATO, N
;
IDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
IDA, M
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1988,
36
(01)
:158
-160
[5]
A 5-MA 1-GHZ GAAS DUAL-MODULUS PRESCALAR IC
[J].
SAITO, S
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
SAITO, S
;
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
TAKADA, T
;
KATO, N
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ATSUGI ELECT COMMUN LABS,ATSUGI,KANAGAWA 24301,JAPAN
KATO, N
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1986,
21
(04)
:538
-543
←
1
→