CAPTURE CROSS-SECTION OF SI-SIO2 INTERFACE STATES GENERATED DURING ELECTRON INJECTION

被引：15
作者：
VUILLAUME, D
BOUCHAKOUR, R
JOURDAIN, M
BOURGOIN, JC
机构：
[1] FAC SCI REIMS,ELECTR LAB,F-51046 REIMS,FRANCE
[2] UNIV PARIS 07,CNRS,UNITE 17,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.102397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：153 / 155
页数：3
相关论文
共 50 条
[31]   ELECTRON-HOLE RECOMBINATION AT THE SI-SIO2 INTERFACE [J].
YABLONOVITCH, E ;
SWANSON, RM ;
EADES, WD ;
WEINBERGER, BR .
APPLIED PHYSICS LETTERS, 1986, 48 (03) :245-247
[32]   Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness [J].
Lopes, MCV ;
dosSantos, SG ;
Hasenack, CM ;
Baranauskas, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) :1021-1025
[33]   Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness [J].
LSI/PEE/EPUSP, Sao Paulo, Brazil .
J Electrochem Soc, 3 (1021-1025)
[34]   Accurate Determination for the Energy & Temperature Dependence of Electron Capture CrossSection of Si-SiO2 Interface States Using a New Method [J].
陈开茅 ;
武兰清 ;
许慧英 ;
刘鸿飞 .
Science China Mathematics, 1993, (11) :1397-1408
[35]   Capture cross sections of defect states at the Si/SiO2 interface [J].
Albohn, J ;
Füssel, W ;
Sinh, ND ;
Kliefoth, K ;
Fuhs, W .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) :842-849
[36]   OXIDE FIELD-DEPENDENCE OF SI-SIO2 INTERFACE STATE GENERATION AND CHARGE TRAPPING DURING ELECTRON INJECTION [J].
HEYNS, MM ;
RAO, DK ;
DEKEERSMAECKER, RF .
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) :327-338
[37]   METASTABILITIES OF SI-SIO2 INTERFACE [J].
WHITE, CT ;
NGAI, KL .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03) :462-463
[38]   MORPHOLOGY OF SI-SIO2 INTERFACE [J].
SUGANO, T ;
CHEN, JJ ;
HAMANO, T .
SURFACE SCIENCE, 1980, 98 (1-3) :154-166
[39]   CONTRIBUTIONS OF OXYGEN, SILICON, AND HYDROGEN TO INTERFACE STATES OF AN SI-SIO2 INTERFACE [J].
FAHRNER, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :784-787
[40]   POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE [J].
MARTINEZ, E ;
YNDURAIN, F .
PHYSICAL REVIEW B, 1982, 25 (10) :6511-6513
12345