CAPTURE CROSS-SECTION OF SI-SIO2 INTERFACE STATES GENERATED DURING ELECTRON INJECTION

被引：15
作者：
VUILLAUME, D
BOUCHAKOUR, R
JOURDAIN, M
BOURGOIN, JC
机构：
[1] FAC SCI REIMS,ELECTR LAB,F-51046 REIMS,FRANCE
[2] UNIV PARIS 07,CNRS,UNITE 17,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.102397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：153 / 155
页数：3
相关论文
共 50 条
[21]   PHOTOCAPACITY PROBING OF SI-SIO2 INTERFACE STATES [J].
KAMIENIECKI, E ;
NITECKI, R .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03) :463-463
[22]   MODEL OF ELECTRONIC STATES AT THE SI-SIO2 INTERFACE [J].
CARRICO, AS ;
ELLIOTT, RJ ;
BARRIO, RA .
PHYSICAL REVIEW B, 1986, 34 (02) :872-878
[23]   INTERFACE ELECTRONIC STATE GENERATION IN SI-SIO2 SYSTEM BY AVALANCHE ELECTRON INJECTION [J].
KOZLOV, SN ;
POTAPOV, AY .
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1989, 30 (03) :74-79
[24]   STRESS AT SI-SIO2 INTERFACE AND ITS RELATIONSHIP TO INTERFACE STATES [J].
LANE, CH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :998-+
[25]   Electron states at the Si-SiO2 boundary (Review) [J].
Primachenko, V. E. ;
Kirillova, S. I. ;
Chernobai, V. A. ;
Venger, E. F. .
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2005, 8 (04) :38-54
[26]   THE FREQUENCY-DEPENDENCE OF CAPACITANCE DERIVATIVE IN MOS CAPACITOR - A NEW METHOD FOR DETERMINING THE DENSITIES AND CAPTURE CROSS-SECTION OF THE SURFACE-STATE AT THE SI-SIO2 INTERFACE [J].
XU, MZ ;
TAN, CH .
CHINESE PHYSICS, 1986, 6 (04) :1071-1080
[27]   HYDROGEN INDUCED SURFACE STATES AT SI-SIO2 INTERFACE [J].
ZAININGER, KH ;
WARFIELD, G .
PROCEEDINGS OF THE IEEE, 1964, 52 (08) :972-&
[28]   INTERFACE STATES OF SI-SIO2 SYSTEM AND THEIR SEPARATION IN GROUPS [J].
FLIETNER, H ;
FUSSEL, W ;
SINH, ND .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :K99-K101
[29]   ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF SI-SIO2 INTERFACE [J].
REVESZ, AG ;
GOLDSTEIN, B .
SURFACE SCIENCE, 1969, 14 (02) :361-+
[30]   Field mechanism of defect generation at Si-SiO2 interface under hot electron injection [J].
J Non Cryst Solids, (186)
12345