CAPTURE CROSS-SECTION OF SI-SIO2 INTERFACE STATES GENERATED DURING ELECTRON INJECTION

被引：15

作者：

VUILLAUME, D

BOUCHAKOUR, R

JOURDAIN, M

BOURGOIN, JC

机构：

[1] FAC SCI REIMS,ELECTR LAB,F-51046 REIMS,FRANCE

[2] UNIV PARIS 07,CNRS,UNITE 17,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：153 / 155

页数：3

共 50 条

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