共 50 条
- [42] OBSERVATION OF A HYDROGEN EVOLUTION THRESHOLD AT AN N-SILICON AN-ELECTROLYTE INTERFACE USING A NEW METHOD OF DIFFERENTIAL ELECTROREFLECTANCE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 261 - 261
- [43] PHOTOREACTIONS AT THE SEMICONDUCTOR ELECTROLYTE INTERFACE UNDER DIMINISHED FIELD CONDITIONS - TRANSIENT CURRENTS AND CHARGE COLLECTION IN PULSED LASER IRRADIATED TIO2 ELECTRODES JOURNAL OF PHYSICAL CHEMISTRY, 1989, 93 (05): : 1984 - 1987
- [44] Charge Transfer across the n-Type GaN-Electrolyte Interface JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (42): : 22281 - 22286
- [46] INFLUENCE OF THE SURFACE PRETREATMENT ON THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS AND THE SPECTRAL RESPONSE OF THE N-GAAS-ELECTROLYTE INTERFACE BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1979, 83 (03): : 236 - 241
- [47] UHV model experiments of the semiconductor/electrolyte interface:: Adsorption of I2 on n- and p-doped WSe2(0001) BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1998, 102 (01): : 96 - 102
- [49] Transistor based study of the electrolyte/SiO2 interface PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (14): : 3412 - 3416