TRANSIENT-BEHAVIOR OF GATE POTENTIAL IN AN MOS TRANSMISSION-LINE

[1] BARSAN RM, UNPUBLISHED

[2] CHARGE COUPLED SEMICONDUCTOR DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +

[3] CARLSAW HS, 1959, CONDUCTION HEAT SOLI

[4] Crank J, 1956, MATH DIFFUSION

[5] SURFACE-CHARGE TRANSPORT WITH AN MOS-TRANSMISSION-LINE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 177 - 181

[6] BEHAVIOR OF CONTINUOUSLY CHARGE-COUPLED RANDOM-ACCESS MEMORY (C3RAM) [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) : 591 - 596

[7] CHARGE-TRANSFER IN OVERLAPPING GATE CHARGE-COUPLED DEVICES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (03) : 191 - 207

[1] BARSAN RM, UNPUBLISHED

[2] CHARGE COUPLED SEMICONDUCTOR DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +

[3] CARLSAW HS, 1959, CONDUCTION HEAT SOLI

[4] Crank J, 1956, MATH DIFFUSION

[5] SURFACE-CHARGE TRANSPORT WITH AN MOS-TRANSMISSION-LINE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 177 - 181

[6] BEHAVIOR OF CONTINUOUSLY CHARGE-COUPLED RANDOM-ACCESS MEMORY (C3RAM) [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) : 591 - 596

[7] CHARGE-TRANSFER IN OVERLAPPING GATE CHARGE-COUPLED DEVICES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (03) : 191 - 207