ELECTRICAL-PROPERTIES OF SI(100) FILMS DOPED WITH LOW-ENERGY (LESS-THAN-OR-EQUAL-TO 150 EV) SB IONS DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：25
作者：
FONS, P
HIRASHITA, N
MARKERT, LC
KIM, YW
GREENE, JE
NI, WX
KNALL, J
HANSSON, GV
SUNDGREN, JE
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 18期
关键词：
D O I：
10.1063/1.99809
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1732 / 1734
页数：3
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