INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS

被引：267

作者：

KENNEDY, EF

CSEPREGI, L

MAYER, JW

SIGMON, TW

机构：

[1] CAL TECH,PASADENA,CA 91125

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4241 / 4246

页数：6

共 10 条

[1]

BRICE DK, 1975, ION IMPLANTATION RAN

[2] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[4]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[5]

KENNEDY EF, 1976, P INT C ION IMPLANTA

[6] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J].

MADER, S ;

TU, KN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :501-503

[7]

Maissel LI, 1970, HDB THIN FILM TECHNO, P10

[8]

SIGMON TW, UNPUBLISHED

[9]

SIGMON TW, 1975, P INT C ION IMPLANTA, P633

[10]

Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6

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