MISFIT DISLOCATION-STRUCTURE OF AN INGAAS/GAAS HETEROJUNCTION WITH LOW MISFIT

被引：9

作者：

AHEARN, JS ^{[1
]}

LAIRD, C ^{[1
]}

BALL, CAB ^{[1
]}

机构：

[1] UNIV PENN,DEPT MET & MAT SCI,PHILADELPHIA,PA 19174

来源：

THIN SOLID FILMS | 1977年 / 42卷 / 01期

关键词：

D O I：

10.1016/0040-6090(77)90085-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：117 / 125

页数：9

共 12 条

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[3]

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[8] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].

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[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J].

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