AB-INITIO STUDY OF POSITRON TRAPPING AT A VACANCY IN GAAS

被引：66

作者：

GILGIEN, L ^{[1
]}

GALLI, G ^{[1
]}

GYGI, F ^{[1
]}

CAR, R ^{[1
]}

机构：

[1] UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA 4,SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.72.3214

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a first-principles study of positron trapping at a negatively charged As vacancy in GaAs. Lattice relaxations induced both by the presence of the defect and of the positron have been included in a self-consistent way. In the presence of a positron, the volume of the vacancy increases and its symmetry is lowered. The positron wave function is well localized in the defect. Calculated positron lifetimes and angular correlations of annihilation photons are in good agreement with recent experiments.

引用

页码：3214 / 3217

页数：4

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