COMPARISON OF THE CHEMICAL-STRUCTURE AND COMPOSITION BETWEEN N2O OXIDES AND REOXIDIZED NH3-NITRIDED OXIDES

被引:40
作者
BHAT, M [1 ]
AHN, J [1 ]
KWONG, DL [1 ]
ARENDT, M [1 ]
WHITE, JM [1 ]
机构
[1] UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
关键词
D O I
10.1063/1.111951
中图分类号
O59 [应用物理学];
学科分类号
摘要
The chemical structure and composition of ultrathin N2O oxides have been investigated using angle resolved x-ray photoelectron spectroscopy and compared to those of reoxidized NH3-nitrided SiO2. It is found that N2O oxide shows a second nitrogen-related bond (N-O bonds) in close proximity to the SiO2/Si interface in addition to the typically observed Si-N bonds in reoxidized NH3-nitrided SiO2. In addition, the change of the difference between Si 2p and O 1s binding energies in the N2O oxide and reoxidized NH3-nitrided SiO2 with the take-off angle is negligible due to the interfacial nitrogen incorporation.
引用
收藏
页码:1168 / 1170
页数:3
相关论文
共 24 条
[1]   FURNACE NITRIDATION OF THERMAL SIO2 IN PURE N2O AMBIENT FOR ULSI MOS APPLICATIONS [J].
AHN, J ;
TING, W ;
KWONG, DL .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) :117-119
[2]   HIGH-QUALITY ULTRATHIN GATE DIELECTRICS FORMATION BY THERMAL-OXIDATION OF SI IN N2O [J].
AHN, J ;
TING, W ;
CHU, T ;
LIN, SN ;
KWONG, DL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) :L39-L41
[3]   USE OF MULTILAYER TECHNIQUES FOR XPS IDENTIFICATION OF VARIOUS NITROGEN ENVIRONMENTS IN THE SI/NH3 SYSTEM [J].
BISCHOFF, JL ;
LUTZ, F ;
BOLMONT, D ;
KUBLER, L .
SURFACE SCIENCE, 1991, 251 :170-174
[4]   HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS [J].
CHANG, CC ;
KAMGAR, A ;
KAHNG, D .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :476-478
[5]   XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE [J].
GRUNTHANER, FJ ;
LEWIS, BF ;
ZAMINI, N ;
MASERJIAN, J ;
MADHUKAR, A .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1640-1646
[6]   LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
VASQUEZ, RP ;
LEWIS, BF ;
MASERJIAN, J ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453
[7]   NITROGEN 1S ELECTRON BINDING ENERGIES . CORRELATIONS WITH MOLECULAR ORBITAL CALCULATED NITROGEN CHARGES [J].
HENDRICKSON, DN ;
HOLLANDER, JM ;
JOLLY, WL .
INORGANIC CHEMISTRY, 1969, 8 (12) :2642-+
[8]   ELECTRICAL AND PHYSICAL-PROPERTIES OF ULTRATHIN REOXIDIZED NITRIDED OXIDES PREPARED BY RAPID THERMAL-PROCESSING [J].
HORI, T ;
IWASAKI, H ;
TSUJI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :340-350
[9]   CHARGE-TRAPPING PROPERTIES OF ULTRATHIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING [J].
HORI, T ;
IWASAKI, H ;
TSUJI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :904-910
[10]  
Hori T., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P837, DOI 10.1109/IEDM.1990.237032