A COMPARATIVE-STUDY OF VISIBLE PHOTOLUMINESCENCE FROM ANODIZED AND FROM CHEMICALLY STAINED SILICON-WAFERS

被引：19

作者：

AOYAGI, H

MOTOHASHI, A

KINOSHITA, A

AONO, T

SATOU, A

机构：

[1] FUJIKURA LTD,DIV RES & DEV,KOTO KU,TOKYO 135,JAPAN

[2] TOKYO DENT COLL,FAC ENGN,TOKYO 101,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

POROUS SILICON; ANODIZATION; NONDEGENERATE SILICON WAFER; PHOTOLUMINESCENCE; CHEMICAL ETCHING; STAIN FILM; SILOXENE;

D O I：

10.1143/JJAP.32.L1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence characteristics of anodized porous layers and chemically stained films are compared. A luminescence and an absorption band observed commonly in both materials suggest existence of similar luminous materials, though anodized samples show additional absorption bands. Consideration of both the properties of porous silicons and anodization conditions suggests that the luminous material contains silicon suboxide. The luminous material, prepared even under pure anodization conditions, ir, not an anodized product, but a chemical product on the surface of anodized layers, formed simultaneously with anodization.

引用

页码：L1 / L4

页数：4

共 18 条

[1] STAIN FILMS ON SILICON [J].