EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM

被引：27

作者：

TABE, M

ARAI, K

NAKAMURA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 04期

关键词：

D O I：

10.1143/JJAP.20.703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：703 / 708

页数：6

共 11 条

[1] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J].

BECKER, GE ;

BEAN, JC .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3395-3399

[2] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J].

BENNETT, RJ ;

GALE, RW .

PHILOSOPHICAL MAGAZINE, 1970, 22 (175) :135-&

[3] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J].

HENDERSON, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :772-+

[4] CARBIDE CONTAMINATION OF SILICON SURFACES [J].

HENDERSON, RC ;

MARCUS, RB ;

POLITO, WJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) :1208-+

[5] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J].

JOYCE, BA .

REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (03) :363-+

[6] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].

JOYCE, BA ;

BRADLEY, RR ;

BOOKER, GR .

PHILOSOPHICAL MAGAZINE, 1967, 15 (138) :1167-&

[7] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J].

OTA, Y .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1102-1110

[8] CHEMISORPTION OF CHLORINE ON SI(111) 7X7 AND 1X1 SURFACES [J].

PANDEY, KC ;

SAKURAI, T ;

HAGSTRUM, HD .

PHYSICAL REVIEW B, 1977, 16 (08) :3648-3651

[9]

TABE M, 1980, SURF SCI, V99, pL403, DOI 10.1016/0039-6028(80)90544-0

[10]

TOULOUKIAN YS, 1972, THERMOPHUSICAL PROPE, V9

← 1 2 →