EFFETS MAGNETOELECTRIQUES ET THERMOMAGNETOELECTRIQUES DANS LES SEMI-CONDUCTEURS .1.

被引：10

作者：

GODEFROY, L

TAVERNIER, J

机构：

来源：

JOURNAL DE PHYSIQUE ET LE RADIUM | 1960年 / 21卷 / 04期

关键词：

D O I：

10.1051/jphysrad:01960002104024900

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：249 / 260

页数：12

共 11 条

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[4] DC MAGNETOCONDUCTIVITY AND ENERGY BAND STRUCTURE IN SEMICONDUCTORS
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VENABLES, JD
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[5] DEGROOT, 1951, THERMODYNAMICS IRREV
[6] MAGNETORESISTANCE OF GERMANIUM SAMPLES BETWEEN 20-DEGREES AND 300-DEGREES-K
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FONER, A
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[7] FAN HY, VALENCE SEMICONDUCTO, V1
[8] MAGNETORESISTANCE OF HOLES IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES
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LAX, B
[J]. PHYSICAL REVIEW, 1957, 107 (06): : 1530 - 1534
[9] THE MAGNETO-RESISTANCE EFFECT IN ORIENTED SINGLE CRYSTALS OF GERMANIUM
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[J]. PHYSICAL REVIEW, 1951, 83 (04): : 768 - 776
[10] NOTE ON THE THEORY OF RESISTANCE OF A CUBIC SEMICONDUCTOR IN A MAGNETIC FIELD
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