RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD SILICON .4. THE SICL4-H2-N2 AND THE SIHCL3-H2-N2 SYSTEM

被引：25

作者：

BLOEM, J

CLAASSEN, WAP

VALKENBURG, WGJN

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 57卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90264-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：177 / 184

页数：8

共 21 条

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J].

BAN, VS ;

GILBERT, SL .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :284-289

[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL [J].

BAN, VS ;

GILBERT, SL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1382-1388

[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4 [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1389-1391

[4] TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :317-320

[5]

BERKMAN S, 1978, HETEROEPITAXIAL SEMI, pCH7

[6] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .1. THE SIH4-HCL-H2 SYSTEM [J].

BLOEM, J ;

CLAASSEN, WAP .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (03) :435-444

[7]

BLOEM J, 1980, CURRENT TOPICS MATER, V1, pCH4

[8] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .2. THE SIH2CL2-H2-N2-HCL SYSTEM [J].

CLAASSEN, WAP ;

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (04) :807-815

[9] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .3. THE SIH4-H2-N2 SYSTEM [J].

CLAASSEN, WAP ;

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) :443-452

[10]

Duchemin J. P., 1977, Revue Technique Thomson-CSF, V9, P33

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