RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD SILICON .4. THE SICL4-H2-N2 AND THE SIHCL3-H2-N2 SYSTEM

被引：25

作者：

BLOEM, J

CLAASSEN, WAP

VALKENBURG, WGJN

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 57卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90264-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：177 / 184

页数：8

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