STRUCTURAL DAMAGE AND DEFECTS CREATED IN SIO2-FILMS BY AR ION-IMPLANTATION

被引：27

作者：

GARRIDO, B ^{[1
]}

SAMITIER, J ^{[1
]}

BOTA, S ^{[1
]}

DOMINGUEZ, C ^{[1
]}

MONTSERRAT, J ^{[1
]}

MORANTE, JR ^{[1
]}

机构：

[1] CSIC,CTR NACL MICROELECTR,E-08193 BARCELONA,SPAIN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00120-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural damage produced by Ar ion implantation into SiO2 layers has been analyzed with the help of different characterization techniques, By using infrared absorption spectroscopy, compaction, bond distorsion and structural disorder have been investigated. The results suggest that the dominant effect of the ion implantation is creation of structural damage consisting of point defects such as broken bonds and vacancies. The number of absorbing Si-O bonds have been calculated from the dielectric function dispersion analysis which gives a saturation for doses of the order of 10(14) cm(-2). This saturation is reached after 15.5 % of Si-O bond breaking. The infrared results are also discussed together with the results obtained by electroluminiscence measurements performed in electrolyte-SiO2-Si systems. Further, X-ray photoelectron spectroscopy measurements of Si 2p core level binding energy have allowed the damaged oxide to be modelled as if it were composed of suboxide-like species.

引用

页码：101 / 105

页数：5

共 15 条

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