PULSE-DOPED DIAMOND P-CHANNEL METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：69

作者：

SHIOMI, H

NISHIBAYASHI, Y

TODA, N

SHIKATA, S

机构：

[1] Itami Research Laboratories, Sumitomo Electric Industries, Ltd., Koyakita, Itami, Hyogo

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期

关键词：

D O I：

10.1109/55.363207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-type diamond metal semiconductor field-effect transistor structure, utilizing a boron pulse-doped layer as the conducting channel, has been successfully fabricated. The pulse-doped structure consists of an undoped diamond buffer layer, a highly doped thin diamond active layer, and an undoped diamond cap layer grown by the microwave plasma assisted chemical vapor deposition method. It is shown that this field-effect transistor with a gate length of 4 mu m and the gate width of 39 mu m exhibits an extrinsic transconductance of 116 mu S/mm with both pinch-off characteristics and current saturation.

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页码：36 / 38

页数：3

相关论文

共 17 条

[1] CHARACTERISTICS OF PLANAR DOPED FET STRUCTURES [J].

BOARD, K ;

CHANDRA, A ;

WOOD, CEC ;

JUDAPRAWIRA, S ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :505-510

[2] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].

GEIS, MW ;

RATHMAN, DD ;

EHRLICH, DJ ;

MURPHY, RA ;

LINDLEY, WT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343

[3] HIGH-TEMPERATURE THIN-FILM DIAMOND FIELD-EFFECT TRANSISTOR FABRICATED USING A SELECTIVE GROWTH METHOD [J].

GILDENBLAT, GS ;

GROT, SA ;

HATFIELD, CW ;

BADZIAN, AR .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (02) :37-39

[4] FABRICATION OF METAL-INSULATOR-SEMICONDUCTOR DEVICES USING POLYCRYSTALLINE DIAMOND FILM [J].

KIYOTA, H ;

OKANO, K ;

IWASAKI, T ;

IZUMIYA, H ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L2015-L2017

[5]

Mishra U. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P829

[6] ELECTRONIC-PROPERTIES OF A PULSE-DOPED GAAS STRUCTURE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

NAKAJIMA, S ;

KUWATA, N ;

NISHIYAMA, N ;

SHIGA, N ;

HAYASHI, H .

APPLIED PHYSICS LETTERS, 1990, 57 (13) :1316-1317

[7] LOW-NOISE CHARACTERISTICS OF PULSE-DOPED GAAS-MESFETS WITH PLANAR SELF-ALIGNED GATES [J].

NAKAJIMA, S ;

OTOBE, K ;

SHIGA, N ;

KUWATA, N ;

MATSUZAKI, K ;

SEKIGUCHI, T ;

HAYASHI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :771-776

[8] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J].

SCHUBERT, EF ;

FISCHER, A ;

PLOOG, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :625-632

[9]

SHIKATA S, 1993, 2 INT C APPL DIAM FI, P377

[10] CHARACTERIZATION OF BORON-DOPED DIAMOND EPITAXIAL-FILMS [J].

SHIOMI, H ;

NISHIBAYASHI, Y ;

FUJIMORI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07) :1363-1366