GENERATION-RECOMBINATION NOISE OF NI-DOPED GE IN TEMPERATURE RANGE 350 DEGREES -100 DEGREES K AND CAPTURE CROSS-SECTIONS OF NI IN GE

被引：15
作者：
KLAASSEN, FM
BOOY, HC
BLOK, J
机构：
来源：
PHYSICA | 1961年 / 27卷 / 01期
关键词：
D O I：
10.1016/0031-8914(61)90020-9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：48 / &
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