OPTICAL INVESTIGATIONS OF SURFACE AND INTERFACE PROPERTIES AT III-V SEMICONDUCTORS

被引：8

作者：

SCHREIBER, J

HILDEBRANDT, S

KIRCHER, W

RICHTER, T

机构：

[1] Martin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, O- 4010 Halle (Saale), Postfach

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90144-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For samples of GaAs(001) (n = 8 x 10(15)-1.5 x 10(18) cm-3), measurements of photoluminescence, photoreflectance and beam-voltage-dependent cathodoluminescence in the scanning electron microscope were performed to prove the differences between phi-b, Q(ss) and upsilon-s for free surfaces with and without chemical treatment (sulphidization and selenium vapour treatment) and the Si3N4-GaAs interface. The chemically treated surfaces exhibit decreased phi-b and upsilon-s values. However, the passivation effect tends to be unstable. Si3N4-GaAs interfaces show poor electronic quality but good stability.

引用

页码：31 / 35

页数：5

共 7 条

[1] COMPARISON OF SURFACE-PROPERTIES OF SODIUM SULFIDE AND AMMONIUM SULFIDE PASSIVATION OF GAAS [J].