THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM

被引：27

作者：

POULIN, F

BOURGOIN, JC

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 01期

关键词：

D O I：

10.1051/rphysap:0198000150101500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：15 / 19

页数：5

共 9 条

[1] BEHAVIOUR OF PRIMARY DEFECTS IN ELECTRON-IRRADIATED GERMANIUM [J].

BOURGOIN, J ;

MOLLOT, F .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 43 (01) :343-&

[2] THRESHOLD ENERGY DETERMINATION IN THICK SEMICONDUCTOR SAMPLES [J].

BOURGOIN, JC ;

LUDEAU, P ;

MASSARANI, B .

REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (02) :279-284

[3] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] LOW-TEMPERATURE ANNEALING STUDIES IN GE [J].

MACKAY, JW ;

KLONTZ, EE .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1269-1274

[6] ENERGY LEVELS IN ELECTRON IRRADIATED N-TYPE GERMANIUM. [J].

Mooney, P.M. ;

Cherki, M. ;

Bourgoin, J.C. .

1979, 40 (02) :l19-l22

[7]

PONS D, 1979, THESIS U PARIS 6

[8] INVESTIGATIONS OF OXYGEN-DEFECT INTERACTIONS BETWEEN 25 AND 700 DEGREES K IN IRRADIATED GERMANIUM [J].

WHAN, RE .

PHYSICAL REVIEW, 1965, 140 (2A) :A690-&

[9]

[No title captured]

← 1 →