EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE

被引：70
作者：
BATSTONE, JL
PHILLIPS, JM
HUNKE, EC
机构：
来源：
PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.60.1394
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1394 / 1397
页数：4
相关论文
共 23 条
[1]  
BAHNCK D, IN PRESS
[2]  
BATSTONE JL, IN PRESS MATER RES S
[3]   ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].
CHERNS, D ;
ANSTIS, GR ;
HUTCHISON, JL ;
SPENCE, JCH .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862
[4]   THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J].
COWLEY, JM ;
MOODIE, AF .
ACTA CRYSTALLOGRAPHICA, 1957, 10 (10) :609-619
[5]  
FATHAUER RW, 1986, MATER RES SOC S P, V54, P313
[6]  
GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699
[7]   ANALYSIS OF EPITAXIAL FLUORIDE-SEMICONDUCTOR INTERFACES [J].
GIBSON, JM ;
PHILLIPS, JM .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :828-830
[8]  
GUY AG, 1971, INTRO MATERIALS SCI
[9]   DETERMINATION OF INTERFACE STATES FOR CAF2/SI(111) FROM NEAR-EDGE X-RAY-ABSORPTION MEASUREMENTS [J].
HIMPSEL, FJ ;
KARLSSON, UO ;
MORAR, JF ;
RIEGER, D ;
YARMOFF, JA .
PHYSICAL REVIEW LETTERS, 1986, 56 (14) :1497-1500
[10]  
HIMPSEL FJ, 1987, MATER RES SOC S P, V94, P181
123