LARGE-AREA LOW-CAPACITANCE INP/INGAAS MSM PHOTODETECTORS FOR HIGH-SPEED OPERATION UNDER FRONT AND REAR ILLUMINATION

被引：12

作者：

HIERONYMI, F

BOTTCHER, EH

DROGE, E

KUHL, D

KOLLAKOWSKI, S

BIMBERG, D

机构：

[1] Technische Universität Berlin, Institut für Festkörperphysik I, 10623 Berlin

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 15期

关键词：

METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTODETECTORS;

D O I：

10.1049/el:19940857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large-area long-wavelength metal-semiconductor-metal (MSM) photodetectors fabricated on the Fe-doped InP/InGaAs material system have been characterised under front and rear illumination employing different thicknesses of the photoactive layer. With a 350mum diameter detection area, theoretically limited capacitance values (0.75pF) and very low depletion voltages (< 1 V) were obtained. For an active layer thickness of 0.7mum, the devices show an external quantum yield of up to 60% and a bandwidth of 0.95 GHz at 10V bias.

引用

页码：1247 / 1248

页数：2

共 4 条

[1]

HIERONYMI F, IEEE PHOTONIC TECH L, V5, P910

[2] HIGH-PERFORMANCE BACK-ILLUMINATED INGAAS INALAS MSM PHOTODETECTOR WITH A RECORD RESPONSIVITY OF 0.96 A/W [J].