SPREADING RESISTANCE ANALYSIS WITH CARRIER SPILLING CORRECTION

This paper presents results obtained in extracting dopant profiles from spreading resistance (SR) data, with carrier spilling effects taken into account. The inversion process involves a one-dimensional solution of Poisson's equation, followed by the application of a multilayer analysis to calculate the spreading resistance for a planar structure whose surface is defined by the probe position on the beveled SR sample. The dopant profiles of n/n+ epitaxial and p-well structures were recovered using the method of regularization. A detailed description is provided of the procedure employed in applying the method of regularization.