PHOTOLUMINESCENCE OF GAAS GROWN BY VAPOR-PHASE EPITAXY

被引:6
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OZEKI, M
RYUZAN, O
DAZAI, K
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10.1143/JJAP.11.1049
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O59 [应用物理学];
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页码:1049 / &
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[3]   PHOTOLUMINESCENCE OF GE-DOPED GAAS GROWN BY VAPOR-PHASE EPITAXY [J].
SCHAIRER, W ;
GRAMAN, W .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (09) :2225-&
[4]  
SHAR J, 1968, PHYS REV, V176, P938