VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS IN SI/GEXSI1-X/GE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：189
作者：
XIE, YH
MONROE, D
FITZGERALD, EA
SILVERMAN, PJ
THIEL, FA
WATSON, GP
机构：
[1] ATandT Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期
关键词：
D O I：
10.1063/1.110547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Modulation-doped Si/GexSi1-x/Ge/GexSi1-x structures were fabricated in which a thin Ge layer was employed as the conduction channel for the two-dimensional hole gas. The strained heterostructure was fabricated on top of a low threading dislocation density, totally relaxed, GexSi1-x buffer layer with a linearly graded Ge concentration profile. The best mobility of the two-dimensional hole gas is 55000 cm2/V s at 4.2 K with a concentration-dependent hole effective mass of less-than-or-equal-to 0.10m0. The effect of the Ge/GeSi interface roughness on the 2DHG mobility was studied.
引用
收藏
页码：2263 / 2264
页数：2
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