EVIDENCE OF MINORITY-CARRIER INJECTION IN (N-N) SNO2-GE HETEROJUNCTION DIODES

被引：9

作者：

LEGGE, RN ^{[1
]}

WANG, EY ^{[1
]}

机构：

[1] ARIZONA STATE UNIV, DEPT ELECT & COMP ENGN, TEMPE, AZ 85281 USA

来源：

关键词：

D O I：

10.1063/1.327529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6035 / 6036

页数：2

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[3]

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[4]

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[5] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[6] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J].

KUNO, HJ .

[7]

Milnes AG, 1972, HETEROJUNCTIONS META

[8]

Wang E. Y., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P967

WANG, EY ;

LEGGE, RN .

[10]

WANG EY, 1974, J ELECTROCHEM SOC, V121