A DOUBLE-DIFFUSED, SILICON, HIGH-FREQUENCY SWITCHING TRANSISTOR PRODUCED BY OXIDE MASKING TECHNIQUES

被引：0
|
作者：
ASCHNER, JF
HARE, WFJ
KLEIMACK, JJ
BITTMAN, CA
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1958年 / 105卷 / 12期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C252 / C252
页数：1
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