A DOUBLE-DIFFUSED, SILICON, HIGH-FREQUENCY SWITCHING TRANSISTOR PRODUCED BY OXIDE MASKING TECHNIQUES

被引：0
|
作者：
ASCHNER, JF
HARE, WFJ
KLEIMACK, JJ
BITTMAN, CA
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1958年 / 105卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C252 / C252
页数：1
相关论文
共 50 条
  • [31] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION
    ANKRI, D
    SCAVENNEC, A
    BESOMBES, C
    COURBET, C
    HELIOT, F
    RIOU, J
    APPLIED PHYSICS LETTERS, 1982, 40 (09) : 816 - 818
  • [32] Three P-Silicon Layers in Reliable Lateral Double Diffused Metal Oxide Semiconductor Transistor
    Mehrad, Mahsa
    2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2018, : 229 - 232
  • [33] HIGH-FREQUENCY WAVEFORM GENERATION USING OPTOELECTRONIC SWITCHING IN SILICON
    PROUD, JM
    NORMAN, SL
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (03) : 137 - 140
  • [34] A NEW HIGH-FREQUENCY N-P-N SILICON TRANSISTOR
    PHILLIPS, AB
    INTRATOR, AM
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (03): : 377 - 377
  • [35] A HIGH-PERFORMANCE HIGH-VOLTAGE SELF-ALIGNED DOUBLE-DIFFUSED LATERAL (SADDL) P-N-P TRANSISTOR
    SUGAWARA, Y
    KAMEI, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 23 - 27
  • [36] Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit*
    Duan, Baoxing
    Huang, Xin
    Song, Haitao
    Wang, Yandong
    Yang, Yintang
    CHINESE PHYSICS B, 2021, 30 (04)
  • [37] Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology
    Duan, Baoxing
    Huang, Yunjia
    Xing, Jingyu
    Yang, Yintang
    MICRO & NANO LETTERS, 2019, 14 (10) : 1092 - 1095
  • [38] A simple method to analyze the electrical properties of high power lateral double-diffused metal-oxide-semiconductor transistors
    Huang, TY
    Gong, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (2B): : L170 - L173
  • [39] Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
    Wang, Yu-Ru
    Liu, Yi-He
    Lin, Zhao-Jiang
    Fang, Dong
    Li, Cheng-Zhou
    Qiao, Ming
    Zhang, Bo
    CHINESE PHYSICS B, 2016, 25 (02)
  • [40] Dual-Stepped Gate Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor with Enhanced Device Performance
    Sidar, Devesh Singh
    Parmar, Onika
    Mishra, Zeesha
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (04):
12345