STUDY OF CRYSTALLOGRAPHIC ORIENTATIONS IN THE DIAMOND FILM ON CUBIC BORON-NITRIDE USING RAMAN MICROPROBE

被引：85

作者：

YOSHIKAWA, M ^{[1
]}

ISHIDA, H ^{[1
]}

ISHITANI, A ^{[1
]}

MURAKAMI, T ^{[1
]}

KOIZUMI, S ^{[1
]}

INUZUKA, T ^{[1
]}

机构：

[1] AOYAMA GAKUIN UNIV,TOKYO 520,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured Raman spectra of a diamond film prepared on the (111) surface of cubic boron nitride(c-BN) by the dc plasma chemical vapor deposition method. The polarization property of the Raman line of diamond agrees well with that of LO phonon for the (111) surface of c-BN. The agreement between the polarization property of Raman lines of diamond and c-BN indicates a possibility of the heteroepitaxial growth of the diamond film on the (111) surface of c-BN. It is found that the diamond layers on c-BN are under tensile stress of 2.2×1011 dyn/cm2. The value of the corresponding tensile strain agrees well with the lattice mismatch calculated from the lattice constants of c-BN and diamond, supporting the possibility of the heteroepitaxial growth of the diamond film. Raman spectroscopy is a powerful technique not only to estimate the stress in the diamond film but also to determine the crystallographic orientation.

引用

页码：428 / 430

页数：3

共 13 条

[1] RAPID GROWTH OF DIAMOND FILMS BY ARC-DISCHARGE PLASMA CVD [J].