OPTICAL LIMITING IN SEMICONDUCTORS

被引：82

作者：

RALSTON, JM

CHANG, RK

机构：

[1] Dunham Laboratory, Yale University, New Haven

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 06期

关键词：

D O I：

10.1063/1.1652951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nonlinear absorption coefficients of Si from 146 to 452°K and of CdSe, CdTe, and GaAs at 300°K were measured with a Nd:YAlG Q-switched laser. The reported stepwise nature of nonlinear absorption for Si is confirmed, but the assignment of a three-photon process is uncertain. As an optical limiter, the optimum Si thickness to be inserted within a Nd:laser cavity is discussed. © 1969 The American Institute of Physics.

引用

页码：164 / &

共 12 条

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