OPTICAL LIMITING IN SEMICONDUCTORS

The nonlinear absorption coefficients of Si from 146 to 452°K and of CdSe, CdTe, and GaAs at 300°K were measured with a Nd:YAlG Q-switched laser. The reported stepwise nature of nonlinear absorption for Si is confirmed, but the assignment of a three-photon process is uncertain. As an optical limiter, the optimum Si thickness to be inserted within a Nd:laser cavity is discussed. © 1969 The American Institute of Physics.