LATTICE STRAIN RELAXATION AT THE INITIAL-STAGES OF HETEROEPITAXY OF GAAS ON (100)SI BY MOLECULAR-BEAM EPITAXY

被引：16
作者：
YAO, T
NAKAO, H
KAWANAMI, H
TOBA, R
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90361-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：107 / 112
页数：6
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