共 50 条
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- [2] A TEM INVESTIGATION OF THE INITIAL-STAGES OF INSB GROWTH ON GAAS(001) BY MOLECULAR-BEAM EPITAXY MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (03): : 203 - 208
- [3] HETEROEPITAXY OF GAAS ON INP BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 354 - 357
- [4] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L584 - L586
- [5] INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY - EFFECTS OF SURFACE RECONSTRUCTION PHYSICAL REVIEW B, 1985, 32 (01): : 6 - 11
- [6] THE INFLUENCE OF SURFACE RECONSTRUCTION ON THE INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1065 - 1066
- [8] SCANNING TUNNELING MICROSCOPY STUDY OF INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (05): : 3657 - 3661
- [9] INITIAL-STAGES OF HETEROJUNCTION FORMATION - SI ON GAAS(100) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 939 - 943
- [10] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI BY MOLECULAR-BEAM EPITAXY JOURNAL OF ELECTRON MICROSCOPY, 1987, 36 (05): : 301 - 301