STRUCTURAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY MULTIPOLAR PLASMA-ENHANCED DEPOSITION

被引：20
作者：
BOHER, P
RENAUD, M
VANLJZENDOORN, LJ
BARRIER, J
HILY, Y
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期
关键词：
D O I：
10.1063/1.339927
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1464 / 1472
页数：9
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共 22 条
[1]  
BARDOS L, 1984, CZECH J PHYS, V1242, pB34
[2]   INGAAS/SI3N4 INTERFACE OBTAINED IN ULTRAHIGH-VACUUM MULTIPOLAR PLASMA - INSITU CONTROL BY ELLIPSOMETRY AND ELECTRICAL CHARACTERIZATION [J].
BOHER, P ;
RENAUD, M ;
LOPEZVILLEGAS, JM ;
SCHNEIDER, J ;
CHANE, JP .
APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :100-107
[3]  
BOHER P, 1987, 6TH INT C PLASM SPUT
[4]  
CHAVE J, 1987, THESIS ECOLE CTR LYO
[5]  
CLAASSEN W, 1977, THIN SOLID FILMS, V129, P239
[6]   MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].
DUN, H ;
PAN, P ;
WHITE, FR ;
DOUSE, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563
[7]  
GOURRIER S, 1981, THIN SOLID FILMS, V65, P379
[8]   OPTICAL-PROPERTIES OF ULTRAFINE GOLD PARTICLES [J].
GRANQVIST, CG ;
HUNDERI, O .
PHYSICAL REVIEW B, 1977, 16 (08) :3513-3534
[9]  
HUAGE PS, 1973, IBM J RES DEV, V17, P472
[10]  
KEEPING ES, 1962, INTRO STATISTICAL IN, pCH12
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