POSITRON DIFFUSION AND TRAPPING AT VACANCIES

被引：36

作者：

HODGES, CH ^{[1
]}

机构：

[1] CAVENDISH LAB,THEORY CONDENSED MATTER GRP,CAMBRIDGE,ENGLAND

来源：

JOURNAL OF PHYSICS F-METAL PHYSICS | 1974年 / 4卷 / 11期

关键词：

D O I：

10.1088/0305-4608/4/11/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L230 / L235

页数：6

共 11 条

[1]

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[2]

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[3]

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[5]

BRANDT W, TO BE PUBLISHED

[6] POSITRON ANNIHILATION AND DEFECTS IN METALS [J].

CONNORS, DC ;

WEST, RN .

PHYSICS LETTERS A, 1969, A 30 (01) :24-&

[7] THEORETICAL FOUNDATION AND EXTENSION OF TRAPPING MODEL [J].

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS, 1974, 3 (01) :61-66

[8]

HALL TM, 1973, B AM PHYS SOC, V18, P54

[9] TRAPPING OF POSITRONS AT VACANCIES IN METALS [J].

HODGES, CH .

PHYSICAL REVIEW LETTERS, 1970, 25 (05) :284-&

[10] TEMPERATURE INDEPENDENCE OF POSITRON TRAPPING BY VACANCIES IN GOLD [J].

MCKEE, BTA ;

JAMIESON, HC ;

STEWART, AT .

PHYSICAL REVIEW LETTERS, 1973, 31 (10) :634-636

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