DETERMINATION OF THE GAIN NONLINEARITY TIME CONSTANT IN 1.3 MU-M SEMICONDUCTOR-LASERS

被引:14
作者
EOM, J [1 ]
SU, CB [1 ]
RIDEOUT, W [1 ]
LAUER, RB [1 ]
LACOURSE, JS [1 ]
机构
[1] GTE LABS INC,WALTHAM,MA 02254
关键词
D O I
10.1063/1.104699
中图分类号
O59 [应用物理学];
学科分类号
摘要
By comparison of the measured K factors (ratio of the damping factor to the square of the resonance frequency) of distributed feedback and Fabry-Perot lasers, it is found that the relaxation time associated with nonlinear gain for 1.3-mu-m InGaAsP lasers is about 0.1 ps. This short time constant is consistent with spectral hole burning being the dominant process responsible for the nonlinear gain.
引用
收藏
页码:234 / 236
页数:3
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