A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR

In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor Sparameters at three operating points for On-state, Off-state and normally biased. The measurements and simulations prove usefulness of the proposed design method. The amplifier was excited with pulsed and cw signals for the case temperature ranging from 60 degrees C to 140 degrees C. As a result of the case temperature changes the output power drop was lower than 0.5 dB at the level of 150 W.