ELECTRON LOCALIZATION IN SILICON INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS

被引:22
作者
KAWAJI, S
WAKABAYASHI, J
NAMIKI, M
KUSUDA, K
机构
关键词
D O I
10.1016/0039-6028(78)90478-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:121 / 128
页数:8
相关论文
共 50 条
[31]   ELECTRONIC G-FACTOR IN SI INVERSION-LAYERS UNDER PARALLEL MAGNETIC-FIELDS [J].
KUNZE, U .
PHYSICAL REVIEW B, 1986, 34 (06) :4426-4428
[32]   MAGNETIC-FIELDS AND STABILITY OF CHARGE-DENSITY-WAVE GROUND-STATES IN SILICON INVERSION LAYERS [J].
KELLY, MJ ;
FALICOV, LM .
SOLID STATE COMMUNICATIONS, 1977, 24 (08) :535-537
[33]   TEMPERATURE-DEPENDENCE OF EFFECTIVE MOBILITY EDGE AND INELASTIC-SCATTERING TIME IN SILICON MOS INVERSION-LAYERS IN STRONG MAGNETIC-FIELDS [J].
MORIYAMA, J ;
KAWAJI, S .
SOLID STATE COMMUNICATIONS, 1983, 45 (06) :511-513
[34]   LOCALIZATION IN STRONG MAGNETIC-FIELDS AND QUANTUM HALL-EFFECT [J].
ANDO, T .
SUPPLEMENT OF THE PROGRESS OF THEORETICAL PHYSICS, 1985, (84) :69-96
[35]   COMBUSTION PROCESSES UNDER STRONG DC MAGNETIC-FIELDS [J].
UENO, S ;
ESAKI, H ;
HARADA, K .
IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) :2077-2079
[36]   THEORY OF IMPURITY BAND CONDUCTIVITY IN INVERSION-LAYERS IN MAGNETIC-FIELDS [J].
KRAMER, GM ;
WALLIS, RF .
SURFACE SCIENCE, 1984, 142 (1-3) :270-273
[37]   EFFECTIVE-MASS CHANGE OF ELECTRONS IN SI INVERSION-LAYERS UNDER PARALLEL MAGNETIC-FIELDS [J].
KUNZE, U .
PHYSICAL REVIEW B, 1987, 35 (17) :9168-9173
[38]   THEORY OF HOT-ELECTRON TRANSPORT IN STRONG MAGNETIC-FIELDS [J].
WAKAHARA, S ;
ANDO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1992, 61 (04) :1257-1270
[39]   ATOMS IN STRONG MAGNETIC-FIELDS [J].
WUNNER, G ;
RUDER, H .
PHYSICA SCRIPTA, 1987, 36 (02) :291-299
[40]   SCATTERING IN STRONG MAGNETIC-FIELDS [J].
MCDOWELL, MRC ;
ZARCONE, M .
ADVANCES IN ATOMIC AND MOLECULAR PHYSICS, 1985, 21 :255-304