HIGH-SPEED OPTOELECTRONIC PULSE GENERATION AND SAMPLING SYSTEM

被引:8
作者
PAULTER, NG
机构
关键词
D O I
10.1109/19.7473
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:449 / 453
页数:5
相关论文
共 17 条
[1]   PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].
AUSTON, DH ;
JOHNSON, AM ;
SMITH, PR ;
BEAN, JC .
APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373
[2]   FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].
BOZLER, CO ;
ALLEY, GD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141
[3]   GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].
CHANG, MF ;
ASBECK, PM ;
MILLER, DL ;
WANG, KC .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :8-10
[4]   PICOSECOND OPTOELECTRONIC MEASUREMENT OF THE HIGH-FREQUENCY SCATTERING PARAMETERS OF A GaAs FET. [J].
Cooper, Donald E. ;
Moss, Steven C. .
IEEE Journal of Quantum Electronics, 1986, QE-22 (01) :94-100
[5]  
DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578
[6]  
FORK RL, 1984, OPT LETT, V9
[7]  
FORK RL, 1981, APPL PHYS LETT, V38
[8]  
Gupta K.C., 1979, MICROSTRIP LINES SLO
[9]   OBSERVED CIRCUIT LIMITS TO TIME RESOLUTION IN CORRELATION-MEASUREMENTS WITH SI-ON-SAPPHIRE, GAAS, AND INP PICOSECOND PHOTOCONDUCTORS [J].
HAMMOND, RB ;
PAULTER, NG ;
WAGNER, RS .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :289-291
[10]  
HAMMOND RB, 1986, P INT C HIGH SPEED E, P223