INTRABAND RAMAN-SCATTERING BY FREE CARRIERS IN HEAVILY DOPED N-SI

被引：56

作者：

CHANDRASEKHAR, M

CARDONA, M

KANE, EO

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.16.3579

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3579 / 3595

页数：17

共 18 条

[1]

CHANDRASEKHAR M, 1977, 13TH P INT C PHYS SE, P255

[2]

CHANDRASEKHAR M, UNPUBLISHED

[3] RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN GE [J].

DOEHLER, J .

PHYSICAL REVIEW B, 1975, 12 (08) :2917-2931

[4] PIEZORESISTANCE OF N-TYPE GERMANIUM [J].

FRITZSCHE, H .

PHYSICAL REVIEW, 1959, 115 (02) :336-345

[5] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J].

HALL, JJ .

PHYSICAL REVIEW, 1967, 161 (03) :756-&

[6] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J].

HENSEL, JC ;

HASEGAWA, H ;

NAKAYAMA, M .

PHYSICAL REVIEW, 1965, 138 (1A) :A225-&

[7] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON [J].

JAIN, K ;

LAI, S ;

KLEIN, MV .

PHYSICAL REVIEW B, 1976, 13 (12) :5448-5464

[8] ELECTRON-PHONON COUPLING IN HIGHLY DOPED N-TYPE SILICON [J].

JOUANNE, M ;

BESERMAN, R ;

IPATOVA, I ;

SUBASHIEV, A .

SOLID STATE COMMUNICATIONS, 1975, 16 (08) :1047-1049

[9]

Klein M.V., 1975, LIGHT SCATTERING SOL

[10] LINDHARD DIELECTRIC FUNCTION IN RELAXATION-TIME APPROXIMATION [J].

MERMIN, ND .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (05) :2362-+

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