LASING CHARACTERISTICS OF LOW-THRESHOLD MICROCAVITY LASERS USING HALF-WAVE SPACER LAYERS AND LATERAL INDEX CONFINEMENT

被引：22

作者：

HUFFAKER, DL

SHIN, J

DEPPE, DG

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 14期

关键词：

D O I：

10.1063/1.113346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented characterizing threshold and transverse mode behavior of microcavity lasers, which use a half-wavelength cavity spacer layer surrounding a single quantum well active region. Selective conversion of AlAs into AlxOy is used to define lateral device dimensions of 2, 5, and 8 μm. Initial results demonstrate a continuous-wave room-temperature lasing threshold current of 97 μA for a 2 μm device and 220 μA for an 8 μm device. We show that lasing operation is influenced by the AlxOy located only 200 Å from the quantum well.© 1995 American Institute of Physics.

引用

页码：1723 / 1725

页数：3

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