STABILITY OF GAAS OXIDE UNDER METALORGANIC MOLECULAR-BEAM EPITAXY PROCESS

被引：3

作者：

HIRATANI, Y ^{[1
]}

SASAKI, M ^{[1
]}

YOSHIDA, S ^{[1
]}

YAMADA, M ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00739-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Well-defined oxide of GaAs can be used as a mask material for selective-area metalorganic molecular beam epitaxy (MOMBE) of GaAs. In this study, the reaction between triethylgallium (TEG) and the GaAs oxide layer was studied using a quadrupole mass spectrometer (QMS) and an atomic force microscope (AM). Results of the QMS observation showed that TEG was reflected on the GaAs oxide surface until the Start of desorption of the GaAs oxide, and the GaAs oxide layer was desorbed from the wafer after a large time delay from the start of TEG supply. AFM images showed that many holes appeared on the GaAs oxide surface during the desorption of the GaAs oxide. The effect of incident TEG upon the stability of the GaAs oxide mask is discussed.

引用

页码：404 / 408

页数：5

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