STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

SrTiO3 thin films were prepared on Si and Pt/TaO(x)/Si substrates by Sr(DPM)2/Ti(i-OC3H7)4/O2/Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of +/-5.6% and a composition uniformity of +/-2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO3 films (Sr/(Sr+Ti) = 0.5) annealed at 600-degrees-C for 2 hours. An SiO2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO3 films, and leakage current densities were 6 x 10(-8) angstrom/cm2 at 1.0 V and 5 x 10(-7) A/cm2 at 1.65 V. The structural and electrical properties were affected by the film composition.