PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS

被引：94

作者：

CUMMEROW, RL

机构：

来源：

PHYSICAL REVIEW | 1954年 / 95卷 / 01期

关键词：

D O I：

10.1103/PhysRev.95.16

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：16 / 21

页数：6

共 10 条

[1]

BRIGGS HB, 1952, J OPT SOC AM, V42, P686

[2]

BURTON, 1953, J PHYS CHEM-US, V57, P853

[3]

FAN HY, 1951, SEMICONDUCTING MATER, P138

[4] THE PHOTON YIELD OF ELECTRON-HOLE PAIRS IN GERMANIUM [J].

GOUCHER, FS .

PHYSICAL REVIEW, 1950, 78 (06) :816-816

[5]

HALL R, COMMUNICATION

[6] P-N JUNCTIONS PREPARED BY IMPURITY DIFFUSION [J].

HALL, RN ;

DUNLAP, WC .

PHYSICAL REVIEW, 1950, 80 (03) :467-468

[7]

JOHNSON VA, 1951, SEMICONDUCTING MATER, P70

[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[9]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, pCH10

[10]

TEAL, 1951, PHYS REV, V81, P637